冶金级硅真空感应熔炼过程温度场的数值模拟  

Numerical Simulation of Metallurgical-Grade Silicon Induction Melting in Vacuum Induction Furnace Temperature Fields

作　　者：吕国强[1] 马文会[1,2] 王华[1] 魏奎先[1,2] 梅向阳[1,2] 

机构地区：[1]昆明理工大学能源冶金学院,云南昆明650093 [2]昆明理工大学真空冶金国家重点实验室,云南昆明650093

出　　处：《铸造技术》2010年第1期93-96,共4页Foundry Technology

基　　金：国家自然科学基金项目(№:50674050);教育部博士点基金资助项目(№:20060674004)资助

摘　　要：用有限元法建立了电磁场与温度场耦合的数学模型,利用Multi-physics Comsol3.5a软件对冶金级硅的真空感应熔炼过程的温度场进行了二维数值模拟。计算结果表明,熔炼过程中熔池中存在不均匀的温度场,温度梯度随时间和空间位置发生变化,在保温段温度梯度最大值为400 K。正是由于硅的感应产生热量小于石墨坩埚感应产生的热量以及存在集肤效应的原因,感应炉内的硅料首先从坩埚中部靠近内壁处开始熔化,逐渐向坩埚中心和两端熔化,最后熔化的是坩埚中心顶部和底部的物料。A numerical model for the electromagnetic-thermal coupling field has been developed by using the finite element method （FEM） and a two-dimension numerical simulation for temperature of metallurgical-grade silicon melting in vacuum induction furnace was carried out by using a software Multi-physics Comsol 3. 5a in this paper. The results showed that the temperature field was dependent on induction heating times and melting pool position and the maximum temperature grads was 400 K in constant temperature stage. These metallurgical-grade silicon near the inside wall of the middle part of the graphite crucible in the vacuum induction furnace first melting, than the phase interface moving toward the center and two endpoints of the graphite crucible, because of collecting surface effect and the induction heating of silicon less than the induction heating of graphite crucible.

关 键 词：冶金级硅 感应熔炼 温度场 数值模拟 

分 类 号：TF133.2[冶金工程—冶金物理化学]