Atomic diffusion in annealed Cu/SiO_2/Si(100) system prepared by magnetron sputtering  

作　　者：曹博 贾艳辉 李公平 陈熙萌 

机构地区：[1]School of Nuclear Science and Technology,Lanzhou University [2]School of Nuclear Science and Engineering,North China Electric Power University

出　　处：《Chinese Physics B》2010年第2期388-391,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 10375028)

摘　　要：Cu thin films are deposited on p-type Si （100） substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO2/Si （100） systems are studied by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si（100） is 350~℃. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO2/Si （100） systems copper silicides are not formed below an annealing temperature of 350~℃. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450~℃.Cu thin films are deposited on p-type Si （100） substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO2/Si （100） systems are studied by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si（100） is 350~℃. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO2/Si （100） systems copper silicides are not formed below an annealing temperature of 350~℃. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450~℃.

关 键 词：DIFFUSION interface reaction copper silicides 

分 类 号：O484.1[理学—固体物理] TQ164.8[理学—物理]