Structural and optical properties of Al_(1-x)In_xN epilayers on GaN template grown by metalorganic chemical vapor deposition  

作　　者：卢国军 朱建军 江德生 王玉田 赵德刚 刘宗顺 张书明 杨辉 

机构地区：[1]ry on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China [2]Suzhou Institute of Nano-tech and Nano-bionics,the Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第2期411-417,共7页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60776047, 60506001, 60476021, 60576003 and 60836003)

摘　　要：This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5~eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5~eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.

关 键 词：metalorganic chemical vapor deposition Al1-xInxN gradual variation in composition optical reflectance spectra 

分 类 号：TN304.2[电子电信—物理电子学]