Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact  

作　　者：王钊 黎兵 郑旭 谢婧 黄征 刘才 冯良桓 郑家贵 

机构地区：[1]College of Materials Science and Engineering,Sichuan University

出　　处：《Chinese Physics B》2010年第2期461-464,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 60506004);the National High Technology Research and Development Program of China (Grant No. 2003AA513010)

摘　　要：Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy （DLTS）, we study the deep levels in CdS/CdTe thin film solar cells with Te：Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at Ev＋0.128~eV, originates from the vacancy of Cd （VCd. The electron trap E1, found at Ec-0.178~eV, is considered to be correlated with the interstitial Cui= in CdTe.Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy （DLTS）, we study the deep levels in CdS/CdTe thin film solar cells with Te：Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at Ev＋0.128~eV, originates from the vacancy of Cd （VCd. The electron trap E1, found at Ec-0.178~eV, is considered to be correlated with the interstitial Cui= in CdTe.

关 键 词：deep level transient spectroscopy CdS/CdTe solar cells Te：Cu back contact 

分 类 号：TM914.42[电气工程—电力电子与电力传动]