倾斜式生长ZnS纳米柱状薄膜及其透射性能的研究  

Preparation and Transmissivity of ZnS Nanocolumn Thin Films with Glancing Angle Deposition Technology

作　　者：卢丽芳[1] 徐征[1] 张福俊[1] 赵谡玲[1] 宋丹丹[1] 厉军明[1] 王永生[1] 徐叙瑢[1] 

机构地区：[1]北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京100044

出　　处：《光谱学与光谱分析》2010年第2期504-507,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(10774013,10804006,10974013,60978060);教育部博士点基金项目(20070004024);博士点新教师基金项目(20070004031);北京市科技新星计划项目(2007A024);国家杰出青年科学基金项目(60825407);北京交通大学优秀博士生科技创新基金项目(141036522);教育部留学回国科研启动基金项目;高等学校学科创新引智计划项目(B08002)资助

摘　　要：采用倾斜式生长的方法,在本底真空为3×10-4Pa,生长率为0.2 nm.s-1的条件下,通过改变衬底的法线方向与入射粒子流的夹角α,在ITO导电玻璃衬底上制备了ZnS纳米薄膜。在α=80°和85°时,样品的X射线衍射谱证实了不同倾斜角时所制备薄膜中均有纳米ZnS晶体形成,扫描电子显微镜(SEM)图像显示,所形成的薄膜均呈现出了柱状结构,并且倾斜角为85°时所得到的纳米柱直径大于80°时所得结果;在α=0°时,相应测量结果表明,虽然在不同衬底上也形成了纳米ZnS晶体薄膜,但并未见柱状结构,而是形成了一层均匀且致密的薄膜。对两种薄膜结构的生长动力学过程作了分析。ITO衬底上薄膜的透射光谱表明ZnS柱状薄膜能够提高可见光的透过率,因此对柱状ZnS纳米薄膜的研究将有利于提高电致发光器件的发光效率。Nanocrystalline ZnS thin films were fabricated by glancing angle deposition （GLAD） technology in an electron beam evaporation system. Deposition was carried out in the custom vacuum chamber at a base pressure 3× 10 4 Pa, and the deposition rate was fixed at 0. 2 nm · s 1. ZnS films were deposited on pieces of indium tin oxide （ITO） substrates when the oblique angle of the substrate relative to the incoming molecular flux was set to 0°, 80° and 85° off the substrate normal respectively. X-ray diffraction （XRD） spectra and scanning electron microscope （SEM） images showed that ZnS nanocrystaltine films were formed on the substrates at different oblique angle, but the nanocolumn structure was only formed under the situation of a^80~ and 85~. The dynamics during the deposition process of the ZnS films at a=0~, 80~ and 85~ was analyzed. The transmitted spectra of ZnS thin films deposited on 1TO substrates showed that the ZnS nanocolumn thin films could enhance the transmissivity in visible range. The ZnS nanocolumn could be used into electroluminescence device, and it would enhance the luminous efficiency of the device.

关 键 词：倾斜式生长 柱状ZnS纳米薄膜 透射光谱 

分 类 号：O484.4[理学—固体物理]