垂直腔面发射激光器的高频调制  

High frequency amplitude modulation of a vertical cavity surface emitting laser

作　　者：赵军[1,2] 冯焱颖[1] 秦丽[2] 闫树斌[1,2] 

机构地区：[1]清华大学精密测试技术及仪器国家重点实验室,北京100084 [2]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《清华大学学报（自然科学版）》2010年第2期237-240,共4页Journal of Tsinghua University(Science and Technology)

基　　金：国家自然科学基金资助项目(50775127/E0525);国家"九七三"重点基础研究项目前期专项(2007CB306504)

摘　　要：面向芯片级原子光学器件的研制需要,研究了垂直腔面发射半导体激光器的高频调制特性及Bogatov效应引起的一级侧边带转移效率的不对称现象。设计制作了垂直腔面发射半导体激光器的控制电路与基于微带匹配技术的高精度阻抗匹配电路。通过实验研究了不同射频输入功率下激光器的调制效率。结果显示:在3.4 GHz、3.162 mW射频功率输入下,实现了最大为60%的边带转移效率;激光器一级左右边带调制幅度具有不对称性,并且该不对称性随射频输入功率的增加而增强。The modulation characteristics of a vertical-cavity surface-emitting laser （VCSEL） diode were analyzed as well as the asymmetry phenomenon of the first-order side band due to the Bogatov effect for applications in chip-scale atomic optical devices. A control circuit for a VCSEL laser diode was fabricated with very precise impedance matching circuit based on the microwave impedance matching technique, Measurements of the modulation efficieneies for different RF power inputs showed that the maximum modulation efficiencies of up to 60~ can be achieved with an input radio frequency （RF） power of 3. 162 mW and the frequencies of 3.4 GHz. The asymmetry of the first-order modulation side band was also measured with the results showing that the asymmetry is more obvious for higher RF power inputs.

关 键 词：光学器件 垂直腔面发射激光器 高频调制 Bogatov效应 

分 类 号：TH74[机械工程—光学工程]