激光二极管双侧面抽运平板Nd：GdVO4晶体热效应  

Thermal Effect in Nd:GdVO_4 Crystal Slab by Laser Diode Double-Side Pumped

作　　者：范婷[1] 高峰[2] 史彭[3] 曹海宾[1] 李金平[1,3] 

机构地区：[1]石河子大学师范学院生态物理重点实验室/物理系,新疆石河子832003 [2]中国电子科技集团第三十九研究所,陕西西安710065 [3]西安建筑科技大学理学院物理系,陕西西安710055

出　　处：《中国激光》2010年第2期339-344,共6页Chinese Journal of Lasers

基　　金：陕西省教育厅专项科研项目(06JK251)资助课题

摘　　要：以解析热分析理论为基础,建立了平板Nd:GdVO_4晶体在激光二极管阵列双侧抽运时的导热微分方程。通过方程求解,得到平板Nd:GdVO_4晶体内部温度场分布的解析式和热形变分布。温度场和热形变场的数值模拟表明,当抽运光平均功率为10 W,抽运区域为1 mm×1 mm时,4组激光二极管阵列光源在3处不同位置的一维温度场、二维温度场分布和热形变量有很大差异;3处抽运光源位置所产生的温度分布和热形变量对比,得到了抽运光源在位置1,2处所产生的温升和热形变量相对较小,位置3处最大。Based on the theory of thermal analysis, heat conduction equation of Nd：GdVO4 crystal slab double-side pumped by laser diode arrays was built. By solving the heat conduction equation, the analytic expression of temperature field and thermal deformation distribution were obtained. As geometry of pumping diodes corresponds to 1 mm× 1 mm, and the average power is about 10 W, the distribution of one-dimensional temperature field, two- dimensional temperature field and thermal deformation have great difference when four groups of laser diode arrays were in there different locations; contrasting with the temperature distribution and thermal deformation produces by pump source in three positions, the temperature rise and thermal deformation in the location 1 and 2 are relatively small, while those of the location 3 are biggest.

关 键 词：激光器 平板Nd:GdVO4晶体 温度场 热形变场 

分 类 号：TN248.1[电子电信—物理电子学]