织构ZnO:Al与p-μ c-Si:H薄膜接触特性的研究  

Contact characteristics between textured ZnO:Al and p-μc-Si:H films

作　　者：吴芳[1,2] 赵先林[1] 王海燕[2] 王子健[2] 高哲[2] 

机构地区：[1]河南教育学院物理系,河南郑州450053 [2]郑州大学材料物理实验室,河南郑州450052

出　　处：《真空》2010年第1期51-54,共4页Vacuum

基　　金：河南教育学院理论物理重点学科资助项目

摘　　要：用PECVD法在不同织构ZnO:Al上沉积了p-μc-Si:H薄膜,研究了不同织构ZnO:Al与p-μc-Si:H薄膜的接触特性,研究结果表明:在织构后的ZnO:Al上沉积的p-μc-Si:H薄膜的晶化率均大于在未织构的ZnO:Al上沉积的p-μc-Si:H薄膜,且织构ZnO:Al与p-μc-Si:H薄膜的接触电阻也均小于未织构的,且织构时间最佳点为15s。The p-uc-Si：H thin films were deposited on different ZnO：Al substrates by PECVD, then the contact characteristics between them were analyzed. The results showed that the crystallizability Of the thin films deposited on textured substrates is higher than on untextured ones and, on the contrany, the contact resistance on textured substrates is lower than on untextured ones. The optimum value of texturing time is 15sec.

关 键 词：织构ZnO:AI p-uc-Si:H薄膜 接触特性 

分 类 号：O484[理学—固体物理] TB43[理学—物理]