功率器件的新结构及其性能特点  

The new structure and performance characteristic of power devices

作　　者：王丹[1] 关艳霞[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,辽宁沈阳110178

出　　处：《电子设计工程》2010年第2期118-120,共3页Electronic Design Engineering

摘　　要：介绍功率器件的发展情况,随后分析比较SJMOSFET与FS-IGBT两种器件的工作原理及其性能特征,SJMOS-FET具有高开关频率,导通电阻小,损耗低等优点。而FS-IGBT则具有通态压降低,无拖尾电流等优点,使得它们在性能上优于传统的功率MOSFET与IGBT。In this paper,the development of power devices is fristly introduced ,and then the work principles and the charaeteristies of SJMOSFET and FS-IGBT are analyzed and compared.The SJMOSFET has the characteristics of high switch frequeney,low Ron,low losses and so on.While FS-IGBT has the advantages of low on-state voltage and not tail eurrent, made both of them beyond the conventional power MOSFET and IGBT.

关 键 词：SJMOSFET FS-IGBT 超结 场截止 缓冲层 

分 类 号：TN32[电子电信—物理电子学]