用于微电容检测的C/V电路设计与研究  

Design and Studies of C/V Circuit for Small Capacitance Measurement

作　　者：柴旭朝[1] 苏小波[1] 顾晓峰[1] 于宗光[1,2] 

机构地区：[1]江南大学信息工程学院,江苏无锡214122 [2]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《微电子学》2010年第1期70-73,共4页Microelectronics

基　　金：江苏省自然科学基金资助项目(BK2007026);教育部新世纪优秀人才支持计划项目(NCET-06-0484)

摘　　要：结合电荷放大原理,通过设计高性能的运算放大器,较好地完成了杂散电容的屏蔽,实现了高可靠性的微电容检测。采用CSMC0.5μmCMOS工艺,用Cadence Spectre对其进行仿真验证,能精确检测出aF量级的微电容。结合考虑不可避免的工艺误差,对差分标称电容的失配进行分析与校准。结果表明:失配仅带来固定的失调,不会对C/V电路的灵敏度造成显著的影响。Based on the principle of charge amplifier, a high performance operational amplifier was designed to shield stray capacitance, which enables high reliability small capacitance measurement. Fabricated in CSMC＇s 0. 5 /,m CMOS process and simulated with Cadence Spectre, the circuit can measure small capacitance precisely with a resolution of aF. Finally, mismatch of differential nominal capacitance caused by inevitable manufacturing errors was analyzed and calibrated. Results showed that mismatch only led to fixed drift, but no significant effect on sensitivity of the C/V circuit.

关 键 词：微电容 标称电容 电荷放大器 c/v电路 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722.77