基于Mie散射理论的光子晶体安德森定域化研究  

Anderson Localization of Photonic Crystal Based on Mie Scattering Theory

作　　者：张士英[1] 

机构地区：[1]枣庄学院物理与电子工程系,山东枣庄277160

出　　处：《光子学报》2010年第1期80-83,共4页Acta Photonica Sinica

基　　金：山东省科技攻关项目(2007GG30004005);山东省教育厅科技计划项目(J08LI68)资助

摘　　要：基于Mie散射理论和低浓度近似,对磷化镓光子晶体的安德森定域化进行了理论计算,并分析了影响定域化参量的各种因素。结果表明,在浓度为10%,折射率比值大于3.8,无吸收状态下,中红外区出现了安德森定域化现象,并且随粒子半径的增大,定域化区向长波段移动,且基质折射率的增大使定域化现象减弱。研究结果为该类晶体的定域化现象提供了理论参考。Based on the Mie scattering theory and the low density approximation, anderson localization of GaP photonic crystal is calculated theoretically and the factors are analyzed which influence on the anderson localization parameter. The results show that the photonic crystal of GaP has anderson localization phenomenon in middle infrared with the condition of density of 10% and the ratio of refractive index of larger than 3.8 and without the absorption. With the increase of the particle＇s radius, the localization area shifts to long wavelength. And, the increase of medium＇s refractive index makes the localization phenomenon weak, which provides theory reference to research anderson localization phenomenon of GaP photonic crystal.

关 键 词：光子晶体 安德森定域化 MIE散射 GAP 

分 类 号：O434.3[机械工程—光学工程] O734[理学—光学]