纳米器件中的1/f噪声分析及其低噪声化处理  

The 1/f noise analysis and low-noise processing in nanoelectronics

作　　者：易鸿[1] 

机构地区：[1]四川文理学院物理与工程技术系,四川达州635000

出　　处：《重庆文理学院学报（自然科学版）》2010年第1期50-52,60,共4页Journal of Chongqing University of Arts and Sciences

基　　金：四川文理学院科研项目(2007B03Z)

摘　　要：阐述了纳米电子器件中1/f噪声的产生机理,分析了单电子晶体管1/f噪声产生的各种原因,并用介观效应的原理,揭示出宏观样品中产生1/f噪声的实质.最后,得出一种针对纳米单电子器件低噪声化处理的方法.The reasons of existence for 1/f noise in nanoelectronics were explained; varies of reasons for 1/f noise were analyzed, and the principle of mesoscopics effect was applied to reveal the essence of real noise in macro - samples. Finally, single - electron devices for nanoelectronics low - noise method of treatment were put forward.

关 键 词：纳米器件 介观系统 1/f噪声 

分 类 号：TB32[一般工业技术—材料科学与工程]