Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates  

作　　者：赵子文 胡礼中 张贺秋 孙景昌 边继明 孙开通 陈希 赵涧泽 李雪 朱锦霞 

机构地区：[1]School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 [2]The Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024

出　　处：《Chinese Physics Letters》2010年第1期218-220,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50532080, Key Laboratory Projects of the Education Department of Liaoning Province under Grant No 20060131 and Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20070141038.

摘　　要：Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.

关 键 词：Chinese climate network complex systems small world COMMUNITY 

分 类 号：TN713.1[电子电信—电路与系统] TN304.21