Fabrication and Characterization of C60-Based Organic Schottky Diodes  

作　　者：程晓曼 胡子阳 吴仁磊 王忠强 印寿根 

机构地区：[1]Institute of Material Physics, Tianjin University of Technology, Tianjin 300384 [2]Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), Tianjin University of Technology, Tianjin 300384 [3]Tianjin key Laboratory of Photoelectric Materials and Device, Tianjin 300384 [4]School of Science, Tianjin University of Technology, Tianjin 300384

出　　处：《Chinese Physics Letters》2010年第1期224-226,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60676051, the Natural Science Foundation of Tianjin under Grant No 07JCYBJC12700, and the Key Discipline of Material Physics and Chemistry of Tianjin.

摘　　要：We have fabricated organic Schottky barrier diodes with Cu/LiF/C60/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C60 is used as the organic layer and LiF as the buffer layer inserted between the cathode and C60. After the annealing process, Schottky contact is well formed at the Al/C60 interface and Ohmic contact is formed at the （Cu/LiF）/C60 interface. The current density-voltage （J-V） measurements of the diodes present nonlinear behavior. As a result, the rectification ratio reaches 1×03. The characteristics of the diodes have been analyzed using the energy band diagram. The values of Schottky barrier height ΦB, ideality factor n and reverse saturation current density Js are extracted according to the standard thermionic emission model.We have fabricated organic Schottky barrier diodes with Cu/LiF/C60/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C60 is used as the organic layer and LiF as the buffer layer inserted between the cathode and C60. After the annealing process, Schottky contact is well formed at the Al/C60 interface and Ohmic contact is formed at the （Cu/LiF）/C60 interface. The current density-voltage （J-V） measurements of the diodes present nonlinear behavior. As a result, the rectification ratio reaches 1×03. The characteristics of the diodes have been analyzed using the energy band diagram. The values of Schottky barrier height ΦB, ideality factor n and reverse saturation current density Js are extracted according to the standard thermionic emission model.

分 类 号：TN311.7[电子电信—物理电子学] O635.1[理学—高分子化学]