Self-Collimation in Planar Photonic Crystals Fabricated by CMOS Technology  

作　　者：杨志峰 武爱民 方娜 蒋寻涯 林旭林 王曦 邹世昌 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050

出　　处：《Chinese Physics Letters》2010年第2期90-92,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60721004, and the Shanghai Institute of Microsystern and Information Technology Fund for Young Scholars.

摘　　要：We report a self-collimating demonstration in planar photonic crystals （PhCs） fabricated in silicon-on-insulator （SOI） wafers using 0.18 μm silicon complimentary metal oxide semiconductor （CMOS） techniques. The emphasis was on demonstrating the self-collimation effect by using the standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhCs are designed on the 230-nm-top-Si layer using a square lattice of air holes 280 nm in diameter. The lattice constant of the PhCs is 380 nm. The experimentally obtained wavelengths for self-collimation are in excellent agreement with theory.We report a self-collimating demonstration in planar photonic crystals （PhCs） fabricated in silicon-on-insulator （SOI） wafers using 0.18 μm silicon complimentary metal oxide semiconductor （CMOS） techniques. The emphasis was on demonstrating the self-collimation effect by using the standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhCs are designed on the 230-nm-top-Si layer using a square lattice of air holes 280 nm in diameter. The lattice constant of the PhCs is 380 nm. The experimentally obtained wavelengths for self-collimation are in excellent agreement with theory.

关 键 词：Electronics and devices Semiconductors Optics quantum optics and lasers 

分 类 号：O734[理学—晶体学] TN432[电子电信—微电子学与固体电子学]