Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si（111）  

作　　者：吴蕊 王立莉 张翼 马旭村 贾金锋 薛其坤 

机构地区：[1]Institute of Physics, Chinese Academy of Sciences, Beijing 100190 [2]Department of Physics, Tsinghua University, Beijing 100084

出　　处：《Chinese Physics Letters》2010年第2期228-231,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 20733008 and 10904168, and the National Basic Research Program of China under Grant No 2009CB929404.

摘　　要：Two Ge-induced incommensurate phases, γ and β, on Si（111） are observed and studied by {／it in situ} scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si（111）-1×1 surface. The β phase consists of two kinds of triangular domains whose stacking sequences are faulted and unfaulted with respect to the Si（111）-1×1 surface, respectively. In the β phase, two types of domain walls, zigzag＇＇ and face-to-face＇＇, form to release the strain. The triangular domains all exhibit a quasi-1×1 hexagonal close-packed structure. By studying the structural evolution from magic clusters to incommensurate structures, the structure models for γ and β phases are proposed.Two Ge-induced incommensurate phases, γ and β, on Si（111） are observed and studied by {／it in situ} scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si（111）-1×1 surface. The β phase consists of two kinds of triangular domains whose stacking sequences are faulted and unfaulted with respect to the Si（111）-1×1 surface, respectively. In the β phase, two types of domain walls, zigzag＇＇ and face-to-face＇＇, form to release the strain. The triangular domains all exhibit a quasi-1×1 hexagonal close-packed structure. By studying the structural evolution from magic clusters to incommensurate structures, the structure models for γ and β phases are proposed.

分 类 号：TN16[电子电信—物理电子学] O48[理学—固体物理]