Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field  

作　　者：杨凌 马晶晶 朱诚 郝跃 马晓华 

机构地区：[1]Key Laboratory of Wide Band Gap Semiconductor Material and Device, Institute of Microelectronics, Xidian University, Xi'an 710071 [2]Key Laboratory of Intelligent Perception and Image Understanding (Ministry of Education), Institute of Intelligent Information Processing, Xidian University, Xi'an 710071 [3]National Key Laboratory of Science and Technology on Antennas and Microwaves, Xidian University, Xi'an 710071

出　　处：《Chinese Physics Letters》2010年第2期243-245,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60736033.

摘　　要：The degradation of AlGaN/GaN high electron mobility transistors （HEMTs） has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance RGate, channel resistance R channel, gate current IG,off at VGS=-5 and VDS=0.1 V, and drain current ID,max at VGS=2 and VDS=5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.The degradation of AlGaN/GaN high electron mobility transistors （HEMTs） has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance RGate, channel resistance R channel, gate current IG,off at VGS=-5 and VDS=0.1 V, and drain current ID,max at VGS=2 and VDS=5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.

关 键 词：Chinese climate network complex systems small world community 

分 类 号：TN32[电子电信—物理电子学] TN304.23