Ultraviolet Sensitive Ultrafast Photovoltaic Effect in Tilted KTaO3 Single Crystals  

作　　者：邢杰 郭尔佳 金奎娟 吕惠宾 何萌 温娟 杨芳 

机构地区：[1]School of Materials Sciences and Technology, China University of Geosciences, Beijing 100083 [2]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190

出　　处：《Chinese Physics Letters》2010年第2期250-252,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50672120, and the National Basic Research Program of China under Grant No 2007CB307005.

摘　　要：An ultraviolet sensitive ultrafast photovoltaic effect is observed in tilted 10° KTaO3 （KT） single crystals. The rise time of the transient photovoltaic pulse is 497.4 ps and the full width at half maximum is 974.6 ps under irradiation of a 266 nm laser pulse with 25 ps duration. An open-circuit photovoltage sensitivity of 328 mV/mJ and a photocurrent sensitivity of 460 mA/mJ are obtained. The experimental results demonstrate the potential applications of KT single crystals in ultraviolet detection.An ultraviolet sensitive ultrafast photovoltaic effect is observed in tilted 10° KTaO3 （KT） single crystals. The rise time of the transient photovoltaic pulse is 497.4 ps and the full width at half maximum is 974.6 ps under irradiation of a 266 nm laser pulse with 25 ps duration. An open-circuit photovoltage sensitivity of 328 mV/mJ and a photocurrent sensitivity of 460 mA/mJ are obtained. The experimental results demonstrate the potential applications of KT single crystals in ultraviolet detection.

关 键 词：Electronics and devices Condensed matter: electrical magnetic and optical Optics quantum optics and lasers 

分 类 号：TQ658.24[化学工程—精细化工] O482.7[理学—固体物理]