Competition between Radiative Power and Dissipation Power in the Refrigeration Process in Oxide Multifilms  

Competition between Radiative Power and Dissipation Power in the Refrigeration Process in Oxide Multifilms

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作  者:张莉莉 胡春莲 王灿 吕惠宾 韩鹏 杨国桢 金奎娟 

机构地区:[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190

出  处:《Chinese Physics Letters》2010年第2期253-255,共3页中国物理快报(英文版)

基  金:Supported by the National Natural Science Foundation of China and the National Basic Research Program of China

摘  要:The maximum refrigeration power dependence on the doping density in the p-BaTiO3/BaTiO3/SrTiO3/BaTiO3/ n-BaTiO3 system and in the p-AlGaAs/AlGaAs/GaAs/AlGaAs/n-AlGaAs system is obtained respectively based on the opto-thermionic refrigeration model. The results show that the maximum refrigeration power in the p-BaTiO3/BaTiO3/SrTiO3/BaTiO3/n-BaTiO3 system increases dramatically with the increase of doping density from 1.0×1018 cm-3 to 5.0×1019 cm-3 while that in the p-AlGaAs/AlGaAs/GaAs/AlGaAs/n-AlGaAs system is nearly a constant. It is found that the different Auger coefficients and the competition between radiative power and dissipation power lead to the different behavior of the maximum refrigeration power dependence on the doping density of the two systems.The maximum refrigeration power dependence on the doping density in the p-BaTiO3/BaTiO3/SrTiO3/BaTiO3/ n-BaTiO3 system and in the p-AlGaAs/AlGaAs/GaAs/AlGaAs/n-AlGaAs system is obtained respectively based on the opto-thermionic refrigeration model. The results show that the maximum refrigeration power in the p-BaTiO3/BaTiO3/SrTiO3/BaTiO3/n-BaTiO3 system increases dramatically with the increase of doping density from 1.0×1018 cm-3 to 5.0×1019 cm-3 while that in the p-AlGaAs/AlGaAs/GaAs/AlGaAs/n-AlGaAs system is nearly a constant. It is found that the different Auger coefficients and the competition between radiative power and dissipation power lead to the different behavior of the maximum refrigeration power dependence on the doping density of the two systems.

关 键 词:Semiconductors Instrumentation and measurement Surfaces interfaces and thin films Nanoscale science and low-D systems Condensed matter: structural mechanical & thermal 

分 类 号:TP273[自动化与计算机技术—检测技术与自动化装置] TN86[自动化与计算机技术—控制科学与工程]

 

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