Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices  被引量:2

Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices

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作  者:刚建雷 黎松林 廖昭亮 孟洋 梁学锦 陈东敏 

机构地区:[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 [2]Signal and Communication Research Institute, China Academy of Railway Sciences, Beijing 100081

出  处:《Chinese Physics Letters》2010年第2期256-259,共4页中国物理快报(英文版)

基  金:Supported by the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No KJCX2-SW-W26, and the National Natural Science Foundation of China under Grant Nos 90406017 and 10427402.

摘  要:Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.

关 键 词:Electronics and devices Semiconductors Condensed matter: structural mechanical & thermal Chemical physics and physical chemistry 

分 类 号:O642.1[理学—物理化学] TU713[理学—化学]

 

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