Effects of Substitution of Sm for Bi in BiFeO3 Thin Films Prepared by the Sol-Gel Method  

作　　者：黄宁湘 赵立峰 许加阳 陈吉利 赵勇 

机构地区：[1]Key Laboratory of Advanced Materials (Ministry of Education), Superconductivity R&D Center (SRDC), Southwest Jiaotong University, Chengdu 610031 [2]School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW, Australia

出　　处：《Chinese Physics Letters》2010年第2期281-284,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50588201 and 50672078.

摘　　要：Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si（100） substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si（100） substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.

分 类 号：TN304.9[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]