Sol-gel法制备多铁性Bi_(0.85)Eu_(0.15)FeO_3薄膜及其性能  

Preparation and Multiferroic Properties of Bi_(0.85)Eu_(0.15)FeO_3 Thin Films Prepared by Sol-gel Method

作　　者：付承菊[1] 黄志雄[1] 李杰[2] 郭冬云[1] 

机构地区：[1]武汉理工大学材料科学与工程学院,武汉430070 [2]重庆科技学院机械工程学院,重庆400042

出　　处：《材料导报》2010年第4期17-19,22,共4页Materials Reports

基　　金：国家自然科学基金青年科学基金(50902108)

摘　　要：采用Sol-gel法在Pt/Ti/SiO2/Si衬底上制备了Bi0.85Eu0.15FeO3薄膜。研究了退火温度对其晶相形成的影响,发现在较低温度退火(450℃)时,Bi0.85Eu0.15FeO3晶相开始形成,但存在杂相,而且结晶度较差;在490～600℃可以获得结晶较好的单相Bi0.85Eu0.15FeO3薄膜。同时对经550℃退火的薄膜的介电、铁电和铁磁性能进行了研究,结果表明,Bi0.85Eu0.15FeO3薄膜具有较好的介电及铁磁性能。当测试频率为1MHz时,薄膜的介电常数和介电损耗分别为80、0.024,饱和磁化强度约为26.2emu/cm3。The Bi0.85Eu0.15FeO3 thin films are prepared by the sol-gel method on the Pt/Ti/SiO2/Si substrate.s. Effect of annealing temperature on the formation of Bi0.85Eu0.15FeO3 phase is investigated. It is found that the Bi0.85Eu0.15FeO3 phase appears in the films annealed at low temperature （450℃）, but the degree of crystallinity is poor and the impurity phase exists in the films. The well crystalline and single Bi0.85Eu0.15FeO3 phase of the films annealed at 490-600℃ can be obtained. The dielectric properties, ferroelectric properties, and ferromagnetic properties of the film annealed at 550℃ are investigated. The Bi0.85Eu0.15FeO3 film shows good dielectric and ferromagnetic properties. When the measuring frequency is 1MHz, the dielectric constant and dielectric loss are 80 and 0. 024, respectively. The saturated magnetization is about 26.2emu/cm^3.

关 键 词：Sol—gel法Bi0.85Eu0.15FeO3薄膜 介电性能 铁电性能 铁磁性能 

分 类 号：TB383[一般工业技术—材料科学与工程] TQ174.758[化学工程—陶瓷工业]