空穴注入层2T-NATA对OLED器件性能的影响  

Influence of Hole Injection Layer 2T-NATA on the Performance of OLED

作　　者：牟强[1] 姚毅[1] 张方辉[1] 靳宝安[1] 蒋谦[1] 

机构地区：[1]陕西科技大学,西安710021

出　　处：《半导体技术》2010年第3期256-259,共4页Semiconductor Technology

基　　金：国家自然科学基金(20476054);陕西省教育厅专项研究基金(03JK1610)

摘　　要：为了提高有机电致发光器件OLED的发光效率,引入2T-NATA作为空穴注入层,制备了结构为ITO/2T-NATA(Xnm)/NPB(25nm)/Alq3:C545T(20nm:质量分数4.5%)/Alq3(30nm)/LiF(1nm)/Al(100nm)的绿光器件,其中X为空穴注入层2T-NATA厚度。分析了2T-NATA的蒸镀厚度分别0,5,10,15,20,25,30,35nm时器件的发光性能。结果表明,2T-NATA的HOMO能级较好的与ITO功函数匹配,降低了空穴注入势垒,引入空穴注入层2T-NATA提高了器件的发光亮度和效率。当2T-NATA厚度为15nm时,器件的效果最好,起亮电压只需2.87V,亮度最高达到18000cd/m2,是不引入空穴注入层亮度的5倍多,在12V时发光效率可达11.4cd/A。The hole injection materials 2T-NATA was introduced into green OLED to improve the light efficiency. The green OLED was prepared with a structure of ITO/2T-NATA （ X nm） /NPB （25 nm）/ Alq3： C545T （20 nm： mass fraction 4.5%） /Alq3 （30 nm） /LiF （1 nm） /Al（100 nm）, and the X is the thickness of hole injection layer of OLED. The thickness of 2T-NATA, ranging from 0 to 35 nm with a step of 5 nm, was systematically analyzed from the aspect of electrolumineseence characteristic. The results show that 2T-NATA＇s HOMO level can reasonably match ITO work function, which reduces the hole-injecting barrier and improves the brightness and efficiency of devices. The maximum brightness of devices with 15 nm 2T-NATA acting as hole injection layer reached 18 000 cd/m2 at 12 V, which is nearly 5 times than that of the device without it. What＇s more, luminescence efficiency reaches 11.4 cd/A at 12 V.

关 键 词：空穴注入层 2T—NATA 有机电致发光器件 发光效率 真空蒸镀 

分 类 号：TN383.1[电子电信—物理电子学]