用同步辐射X射线反射率法研究薄膜结构  

STUDY ON THE STRUCTURE OF THIN FILM BY X RAY REFLECTIVITY WITH SYNCHROTRON RADIATION

作　　者：徐章程[1,2,3,4,5] 郭常霖[1,2,3,4,5] 黄继颇 赵宗彦[1,2,3,4,5] 深町共荣[1,2,3,4,5] 坂牧俊夫 

机构地区：[1]中国科学院上海硅酸盐研究所无机材料分析测试中心 [2]中国科学院上海冶金研究所信息功能材料国家重点实验室 [3]安徽大学物理系 [4]日本琦玉工业大学电子工学系 [5]日本电子株式会社

出　　处：《功能材料与器件学报》1998年第4期273-276,共4页Journal of Functional Materials and Devices

摘　　要：利用同步辐射Ｘ射线对Ｃｒ／ＳｉＯ２系统进行了反射率测量，得到了信噪比非常好的反射率曲线。通过对实验数据进行傅立叶变换和最小二乘法拟合得到了Ｃｒ膜的厚度以及Ｃｒ膜与ＳｉＯ２衬底界面的粗糙度。结果表明，该方法对精确测定界面的粗糙度非常有效。X ray reflectivity measurement using synchrotron radiation is a accurate and easy method to determine the structure of a thin film, compared with other experimental methods. X ray reflectivity investigation using synchrotron radiation were performed on Cr/SiO 2 thin film system. Reflectivity curves with good S/N ratio were collected. The thickness of Cr film and the roughness of the interface between Cr and SiO 2 substrate were obtained by Fourier analysis and least square fit of the experimental data. It is shown that the present method is effective for the determination of interfacial roughness.

关 键 词：X射线反射率 同步辐射 薄膜 

分 类 号：O484.1[理学—固体物理]