Cd_(1-x)Zn_xS(x=0.88)多晶薄膜的制备及性能研究  

Preparation and properties of Cd_(1-x)Zn_xS(x=0.88) polycrystalline thin films

作　　者：孙震[1] 谢晗科[1] 狄霞[1] 李卫[1] 冯良桓[1] 张静全[1] 武莉莉[1] 黎兵[1] 雷智[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《功能材料》2010年第2期235-237,共3页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2006AA05Z418);四川省科技支撑资助项目(2008GZ0027)

摘　　要：采用真空共蒸发法制备了Cd1-xZnxS多晶薄膜,研究了Cd1-xZnxS(x=0.88)多晶薄膜的结构与光电特性。XRD的结果表明,0<x≤0.9,Cd1-xZnxS薄膜为六方结构,高度择优取向;荧光光谱分析与Ve-gard定理的结果以及石英振荡法监测的Cd1-xZnxS多晶薄膜的组分吻合;制备的Cd1-xZnxS多晶薄膜的光学透射谱的吸收边随Zn含量的增加发生蓝移,其光学能隙调制在CdS与ZnS能隙之间;最后测量了Cd1-xZnxS薄膜室温电阻率及暗电导率随温度的变化情况,计算了Cd1-xZnxS薄膜的电导激活能。In this paper,the polycrystalline Cd1-xZnxS thin films were prepared by the vacuum co-evaporation method and structural,optical,and electrical properties of Cd1-xZnxS（x=0.88） thin films were investigated.Cd1-xZnxS（0〈x≤0.9） thin films were hexagonal structure and showed highly preferential orientation.The composition of Cd1-xZnxS thin films determined from Vegard law and quartz crystal oscillation method agrees with that determined from the X-ray fluorescence spectra.Optical absorption edge of optical transmittance for Cd1-xZnxS thin films exhibits a blue shift with the increase of the zinc content,which indicates that optical energy gap can be tuned between 2.44-3.78eV.Finally,the values of dark conductivity for Cd1-xZnxS thin films at various temperatures were measured,and conductivity activation energies were calculated.

关 键 词：Cd1-xZnxS 多晶薄膜 共蒸发 光学能隙 电导激活能 

分 类 号：TN304.055[电子电信—物理电子学]