High-yield synthesis of silicon nanoparticles via the perpendicular pulsed laser ablation in the inert gas  

作　　者：牛海军 张莉 朱家莹 张密林 白续铎 

机构地区：[1]Key Laboratory of Functional Inorganic Material Chemistry,Ministry of Education,School of Chemistry and Materials Science,Heilongjiang University [2]Postdoctoral Workstation of Materials Science and Chemical Engineering,Harbin Engineering University

出　　处：《Optoelectronics Letters》2010年第2期81-84,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Nos.50872024 and 50903028);Heilongjiang Science and Technology Foundation (No.GB08A401-2);Foundation of Science and Technology Bureau of Heilongjiang (No.QC08C10);Harbin Youth Foundation (No.2005AFQXJ062);China Postdoctoral Science Foundation (No.20070410892)

摘　　要：Si nanoparticles are synthesized at a high rate(400-500 mg/h) using the perpendicular pulsed laser ablation(PPLA) on the silicon target at room temperature in Ar atmosphere.The PPLA method can also be used to obtain Si nanocrystal films with large areas on the glass substrate.These particles are etched with a mixture of hydrofluoric acid(HF) and nitric acid(HNO3) to reduce their sizes and the surfaces of these particles are passivated by the high-pressure water vapor annealing(HWA).After treating the particles exhibit blue emission(with maximum photoluminescence(PL) intensity at 404 nm) at room temperature.Si nanoparticles are synthesized at a high rate （400-500 mg/h） using the perpendicular pulsed laser ablation （PPLA） on the silicon target at room temperature in Ar atmosphere. The PPLA method can also be used to obtain Si nanocrystal films with large areas on the glass substrate. These particles are etched with a mixture of hydrofluoric acid （HF） and nitric acid （HNO3） to reduce their sizes and the surfaces of these particles are passivated by the high-pressure water vapor annealing （HWA）. After treating the particles exhibit blue emission （with maximum photoluminescence （PL） intensity at 404 nm） at room temperature.

关 键 词：硅纳米颗粒 脉冲激光烧蚀 纳米粒子 惰性气体 垂直 合成 纳米晶薄膜 目标温度 

分 类 号：TN249[电子电信—物理电子学]