用离子束技术研究稀磁半导体和纳米磁性材料  

Investigation of diluted magnetic semiconductor and nano magnetic material by ion beam technology

作　　者：姚淑德[1] 丁志博[1] 王坤[1] 陈迪[1] 法涛[1] 陈田祥[1] 

机构地区：[1]北京大学核物理与核技术国家重点实验室,北京100871

出　　处：《核技术》2010年第3期173-178,共6页Nuclear Techniques

基　　金：国家自然科学基金(10575007;10875004)资助

摘　　要：综述用离子束技术研究稀磁半导体和纳米磁性材料的构建、调控和改性的进展和现状。离子束注入是优选的构建和调控方法,测试结果表明在GaN和ZnO等新半导体光电材料中注入Mn、Ni和Co等过渡金属离子可得到低温和室温下的铁磁性。离子束分析技术给出这些新材料薄膜的微结构信息,透射电镜下观察到过饱和剂量Mn+注入GaN形成的纳米磁性颗粒。In this paper, we focus on constitution, magnetism modification and characterization of GaN-based materials using ion beam technology and formation of the nano structure by implanting Mn^＋ or Co^＋ ion of different doses into the film samples. SQUID and AGM were used to measure the magnetic properties, such as coercivity and saturation magnetization, for the samples before and after annealing, M-H and M-T curves showed ferromagnetism in the films at both low temperature and room temperature. RBS/C, PIXE and XRD were used to analyze the microstructure, content of doping transition metal and damage. The nano-cluster of ferromagnetism particle was observed under HRTEM.

关 键 词：自旋半导体 纳米磁性材料 离子束技术 

分 类 号：O571.33[理学—粒子物理与原子核物理] O472.5[理学—物理]