固定波长应变量子阱的设计与比较  

DESIGN AND COMPARISON OF STRAINED LAYER QUANTUM WELL WITH FIXED WAVELENGTH

作　　者：张哲民[1] 黄德修[1] 李同宁 

机构地区：[1]华中理工大学光电子工程系 [2]武汉电信器件公司

出　　处：《光子学报》1998年第12期1083-1086,共4页Acta Photonica Sinica

基　　金：863-307计划

摘　　要：针对ｌｎＧａＡｓＰ材料，我们比较了不同应变与阱宽组合的固定波长应变量子阱特性压应变下量子阱的应变量越大，阱宽越窄，其能带结构越理想张应变下主要由于电子与轻空穴的偶极矩阵元比电子与重空穴的大，以及其较大的态密度，使得张应变量子阱的微分增益比压应变和匹配量子阱的大得多如果固定的张应变量只能使第一子带为ＬＨ，第二子带为ＨＨ，则存在一个最优的阱宽，阱宽太小不能消除ＬＨＩ与ＨＨ２的耦合，阱宽太大又会带来ＬＨ３与ＨＨ２的耦合。The strained layer quantum wells with the same wavelength have been compared in this paper.The larger the compressive strain and the narrower the well make the valence band structure more ideal.Under the tensile strain,mainly because the dipole matrix element between e lh is larger than that between e hh,and the larger DOS,differential gain in tensile strained QWs is much larger than that in compressive strained QWs and lattice matched QWs.Under certain tensile strain,there exists an optimum well width.

关 键 词：应变量子阱 增益系数 激光器 设计 垒层材料 

分 类 号：TN248.402[电子电信—物理电子学]