一种基于控制PTAT电流的温度系数可调带隙基准源  

Bandgap Reference with Adjustable Temperature Coefficient Based on Controlling PTAT Current

作　　者：仇岩[1] 魏廷存[1] 王佳[1] 郑然[1] 

机构地区：[1]西北工业大学计算机学院,陕西西安710072

出　　处：《液晶与显示》2010年第1期105-109,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：陕西省2007年重大科技创新项目(No.2007ZKC02-01)

摘　　要：设计了一种温度系数可调的带隙基准源,利用控制PTAT电流的大小产生具有不同温度系数的基准电压,仅采用两个双极型晶体管,具有较好的电源噪声抑制特性。与传统方法相比,简化了电路结构,减小了占用芯片面积,改善了版图设计的对称性。该电路在更宽的调节范围内,通过4位控制信号可实现16级的温度系数调节,同时通过设计专门电路提高了电源噪声抑制比。采用0.35μm CMOS工艺实现了该带隙基准源。仿真结果表明,基准电压的温度系数可在-1.76^+1.84 mV/℃范围内进行调节,低频时基准电压的PSRR达到-110 dB。A bandgap reference（BGR） with adjustable temperature coefficient was designed.By controlling PTAT current,the temperature coefficient of reference voltage can be adjusted from positive to negative.Compared to traditional method,a two-bipolar transistor structure is adopted which could reduce the circuit area in chip and improve the layout symmetry.Furthermore,an OPAMP circuit was designed to improve the PSRR.The reference voltage could be adjusted in a wider adjustment with 16 levels.Implemented with 0.35 μm CMOS process,the Hspice simulation results showed that the temperature coefficient can be adjusted from-1.76 mV/℃ to ＋1.84 mV/℃ and the PSRR of the reference voltage reaches-110 dB at low frequency.

关 键 词：带隙基准 PTAT电流 温度系数可调 PSRR 

分 类 号：TN432[电子电信—微电子学与固体电子学]