高效率半导体激光器波导层掺杂的优化设计  

Doping Profile Optimization and Design of Waveguide Layer for Laser Diode with High Conversion Efficiency

作　　者：熊聪[1] 崇锋[1] 王俊[1] 王冠[1] 韩淋[1] 刘素平[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程中心,北京100083

出　　处：《半导体光电》2010年第1期16-19,54,共5页Semiconductor Optoelectronics

基　　金：中国科学院知识创新工程青年人才领域前沿项目(ISCAS2008T12)

摘　　要：为获得高效率半导体激光器,理论分析并计算了p型波导层四种不同掺杂浓度分布对器件内损耗、串联电阻、阈值电流以及电光转换效率的影响,由此优化了p型波导层的掺杂浓度分布和厚度。根据计算及优化结果,p型波导层采取线性s杂分布,厚度为0.45μm,制备了腔长1200μm的980nm半导体激光器,其阈值电流为324mA,内损耗为1.62cm-1,串联电阻为136mΩ。当输入电流为1.98A时,激光器的斜率效率和输出光功率分别为1.05W/A和1.74W,对应的电光转换效率从未优化时的54.6%提高到58.4%。To improve the power conversion efficiency（PCE） of laser diode, theoretically analyzed and calculated are the influences of four different doping profiles in p-waveguide layer on the internal loss, series resistance, threshold current and PCE of a laser diode with asymmetric waveguide. The doping profile and thickness of p-waveguide layer were optimized. According to the calculation and optimization results, the linear doping＇ profile was adopted in p-waveguide layer and the optimal thickness of p-waveguide layer was 0. 45 ram. The fabricated 980nm laser diode with 1 200 mm cavity length has a threshold current of 324 mA, internal loss of 1.62 cm-1 and series resistance of 136 mΩ. When the current is 1. 98 A, the slope efficiency and output power of the laser are 1.05 W/A and 1.74 W respectively, and the corresponding electro-optical conversion efficiency is improved to 58.4% from 54.6% for the original structure.

关 键 词：半导体激光器 电光转换效率 非对称宽波导 掺杂分布 

分 类 号：TN248.4[电子电信—物理电子学]