横向微堆积大功率半导体激光器线阵的制备  

Fabrication of Transverse Micro-stack High-power Diode Bars

作　　者：张蕾[1] 崔碧峰[2] 高昕[1] 李明[1] 郭伟玲[2] 王建军[1] 王汝杰[1] 沈光地[2] 

机构地区：[1]北京跟踪与通信技术研究所,北京100094 [2]北京工业大学光电子技术实验室,北京100022

出　　处：《半导体光电》2010年第1期20-22,100,共4页Semiconductor Optoelectronics

基　　金：国家重点基础研究发展计划资助项目(2006CB604902);国家自然科学基金项目(60506012)

摘　　要：提出了一种横向微堆积大功率半导体激光器线阵的新结构,在相同的注入电流下提高了器件的输出光功率,有效缓解了大电流下的器件热烧毁和光学灾变性毁坏(COD)。制备了横向微堆积三有源区半导体激光器线阵列,在50A的工作电流下,其输出光功率可达到79.3W,斜率效率可达1.81W/A,是传统单有源区bar条的两倍多。A new structure of transverse micro-stack semiconductor laser bars is put forward to improve the output optical power of semiconductor laser bars at low injection current, which can effectively lessen the thermal damage and catastrophic optical damage（COD）. Micro- stack tunnel regeneration tri-active regions laser diode bars are fabricated. Experiments show that the output optical power is 79.3 W and slope efficiency exceeds 1.81 W/A under 50 A driving current, which is two times of that of the traditional single-active bars.

关 键 词：激光技术 半导体激光器线阵 横向微堆积 

分 类 号：TN248.4[电子电信—物理电子学]