热蒸发法制备一维氧化锡纳米线的研究  

Synthesis of one dimensional SnO_2 nanowires by thermal evaporation

作　　者：马立安[1] 曾绍峰[1] 蔡曙光[1] 陈鼎宁[1] 

机构地区：[1]福建工程学院材料科学工程系,福建福州350108

出　　处：《福建工程学院学报》2010年第1期39-42,共4页Journal of Fujian University of Technology

基　　金：福建省科技重大专项基金(2006HZ0002);福建省青年科技人才基金(E0300075)

摘　　要：采用热蒸发法系统研究了影响氧化锡纳米结构形貌的主要因素。结果发现改变反应中衬底的温度以及氧气的流量或分压所制备的氧化锡纳米结构形貌有较大的变化。在低温、低的氧流量或氧压下所合成的氧化锡为线状结构,在相对高温、高的氧流量或氧压下所合成的氧化锡为棒状形貌。The critical factors that determined the morphology of SnO2 synthesized by a thermal evaporation growth process were systematically examined. We found that the morphology of SnO2 nanostructurc varied from a uniform nanowires layer to nanorod structure by simply controlling oxygen pressure and substrate temperature during its growth. In the low oxygen pressure and substrate temperatures regime, the SnO2 structures grew as a smooth and uniform wires-shaped layer. In the high oxygen pressure and substrate temperatures regime, SnO2 thin films with nanorods formed.

关 键 词：一维纳米结构 晶体生长 氧化锡 

分 类 号：TB383[一般工业技术—材料科学与工程]