电子碰撞激发机制中自电离与双电子俘获  

AUTOIONIZATION AND DIELECTRONIC CAPTURE IN Ne LIKE Ge COLLISIONAL X RAY LASER

作　　者：蓝可[1] 吴建周[1] 张毓泉[1] 

机构地区：[1]北京应用物理与计算数学研究所

出　　处：《强激光与粒子束》1998年第4期481-485,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金

摘　　要：以Ｇｅ为例，研究了双电子复合代替自电离与双电子俘获对离子布居的影响；通过解包括双激发态和自电离与双电子俘获过程的速率方程组，研究了类Ｆ离子与类Ｎｅ离子基态对１９．６ｎｍ与２３．６ｎｍ激光线上、下能级的布居贡献因子及类Ｎａ离子与类Ｎｅ离子的电离速率，并讨论了这两条激光线的反转与增益。Comparison of autoionization and dielectronic capture with dielectronic recombination in ion population in Ge plasma was given. Solving the coupled rate equations, the contribution factors from F like and Ne like ions on the lower and the upper laser level of 19.6 and 23.6 nm lines, and the ionization rates of Na like and Ne like ions were studied. Further more, inversion factor and gain at 19.6 and 23.6nm lines were discussed .

关 键 词：自电离 双电子俘获 双电子复合 离子碰撞 机制 

分 类 号：TN241[电子电信—物理电子学] O463[机械工程—光学工程]