基于SiGe HBT工艺的GNSS接收机混频器设计  

Design of mixers of GNSS receiver based on SiGe HBTs

作　　者：曾华堂[1] 赵红东[1] 申研 王博 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]天津晶研科技有限公司,天津300000

出　　处：《电子设计工程》2010年第3期104-106,共3页Electronic Design Engineering

基　　金：天津市科技计划项目(08ZCKFGX00300)

摘　　要：针对目前国内RFIC发展比较滞后的现状,设计了3款应用于GNSS接收机的基于0.5μm SiGe HBT工艺的混频器(Ⅰ、Ⅱ、Ⅲ),并采用针对混频器的优良指数FOM(figure-of-merit)对这3个混频器进行结构和综合性能比较。3款混频器的供电电压为3.3 V,本振LO输入功率为-10 dBm,其消耗总电流、转换增益、噪声系数、1 dB增益压缩点依次为:Ⅰ)8.7 mA,15 dB,4.1 dB,-17 dBm;Ⅱ)8.4 mA,10 dB,4.6 dB,-10 dBm;Ⅲ)5.4 mA,11 dB,4.9 dB,-10 dBm。而3款混频器的FOM分别为-57.8、-56.6、-54.3,表明混频器Ⅲ的综合性能最佳,混频器Ⅱ次之,最后为混频器Ⅰ。Aiming at the status of domestic RFIC development lags behind at present,three mixers（ Ⅰ, Ⅱ ,Ⅲ） for GNSS receiver based on 0.5μm SiGe HBT process technology were designed and researched.These mixers were compared both in structure and comprehensive performance which is related to FOM （figure of merit）.The three mixers with 3.3V supply and -10dBm input LO power can obtain values of dissipation current, conversion gain, noise figure, ldB gain compression point as follows ： （ Ⅰ ）8.7mA,15dB,4.1dB,-17dBm; （ Ⅱ ） 8.4mA, 10dB,4.6dB,-10dBm; （ Ⅲ ）5.4mA, 1 ldB,4.9dB, -10dBm.While the FOM of the mixers were -57.8,-56.6,-54.3. It demonstrates that the comprehensive performance of mixer I is good, mixer Ⅱ is better and mixer Ⅲ is the best.

关 键 词：微电子学与固体电子学 射频集成电路(RFIC) SiGe HBT 混频器 

分 类 号：TN773[电子电信—电路与系统]