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作 者:陆海鹏[1] 韩满贵[1] 邓龙江[1] 梁迪飞[1] 欧雨[1]
机构地区:[1]电子科技大学微电子与固体电子学院电子薄膜与集成器件国家重点实验室,成都610054
出 处:《物理学报》2010年第3期2090-2096,共7页Acta Physica Sinica
基 金:国家自然科学基金(批准号:60701016);NSFC-RS国际合作项目(批准号:60911130130)资助的课题~~
摘 要:采用有限元微磁学模拟方法研究了Co纳米线在不同外加恒磁场下磁矩的翻转过程.研究结果表明在直径为10nm的Co纳米线内,经过一定的形核时间将在其一端形成一个反向磁畴.磁畴壁的类型为横向畴壁,该畴壁将在一外加恒定磁场的驱动下匀速地从一端运动到另一端.畴壁的运动速度与外加磁场大小呈线性关系.在H为1000kA/m时,发现在纳米线的两端均会形成一个"头对头"的反向磁畴.计算结果表明,畴壁内磁矩的方向旋转一个周期所导致的畴壁运动的距离相同,与外加磁场强度无关.The magnetization reversal processes of cobalt nanowires under different constant external magnetic fields have been studied by using the finite element microma gnetism simulation approach. The results show that magnetic domains with opposite magnetizations will be formed at one end of nanowires with a diameter of 10 nm after a nucleation time. The domain wall is classified as a transverse wall,which can be driven to move with a constant velocity by a constant external applied field from one end to the other. The velocity of domain wall is linearly dependent on the magnitude of external applied magnetic field. When His 1000 kA/m,it is found that two head-to-head domains are found at both ends of nanowires. The calculation results show that the domain wall moves a constant distance during a period in which the direction of any magnetic moment rotates a cycle,which is independent of the magnitude of applied magnetic field.
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