硅片边缘超声振动辅助化学机械抛光实验  

Experiment on Silicon Wafer Edge Hybrid Polishing of Ultrasonic Vibration and Chemical Mechanical

作　　者：刘仁鑫[1] 杨卫平[1] 吴勇波 

机构地区：[1]江西农业大学工学院,南昌330045 [2]日本秋田县立大学机械智能系统工程系

出　　处：《农业机械学报》2010年第2期221-226,共6页Transactions of the Chinese Society for Agricultural Machinery

基　　金：日本秋田县新规事业开发支援基金资助项目(A-2006235)

摘　　要：提出一种超声振动辅助化学机械复合抛光硅片边缘新技术,建立了抛光工具设计、性能检测及复合抛光实验系统,并进行了不同超声振动形式传统化学机械以及抛光工具对硅片边缘抛光的实验研究。结果表明,在相同抛光条件下,抛光工具超声椭圆振动对抛光效果的改善作用最佳。抛光工具加入超声椭圆运动后,工件表面粗糙度值Ra由传统抛光法的0.059μm降低到0.043μm,材料去除量增加22%,且抛光表面形貌有明显改善。A newly hybrid technique for silicon wafer edge polishing of ultrasonic-vibration and chemical mechanical was presented,and the design,performance testing for the polishing tools,were discussed along with establishment of experimental system for the hybrid polishing.And then,the traditional chemical mechanical polishing,as well as the polishing tool with different forms of ultrasonic-vibration was investigated on polish for the edge of silicon wafer.Experimental results showed that in the same polishing condition,the hybrid polishing of ultrasonic-elliptic-vibration and chemical mechanical has a favorable effect to improve wafer edge polishing.As ultrasonic-elliptic-vibration is put in polishing tool,the roughness Ra of silicon wafer polished surface decreases from the traditional polishing method of 0.059 μm down to the 0.043μm,material removal increase by 22%,and the polished surface morphology is significantly improved.

关 键 词：硅片边缘 超声椭圆振动 复合抛光 

分 类 号：TH16[机械工程—机械制造及自动化] TN305.2[电子电信—物理电子学]