Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors  

作　　者：代由勇 颜世申 田玉峰 陈延学 刘国磊 梅良模 

机构地区：[1]School of Physics,and National Key Laboratory of Crystal Materials,Shandong University

出　　处：《Chinese Physics B》2010年第3期477-481,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant Nos. 2007CB924903 and 2009CB929202);the National Natural Science Foundation of China (Grant No. 10974120)

摘　　要：This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.

关 键 词：variable range hopping ferromagnetic semiconductors electrical transport spin polar-ization 

分 类 号：TN304.7[电子电信—物理电子学]