Enhanced resistance switching stability of transparent ITO/TiO_2/ITO sandwiches  

作　　者：孟洋 张培健 刘紫玉 廖昭亮 潘新宇 梁学锦 赵宏武 陈东敏 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第3期503-507,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2007CB925002);the National High Technology Research and Development Program of China (Grant No. 2008AA031401)and Chinese Academy of Sciences

摘　　要：We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.

关 键 词：colossal electroresistance effect electrical pulse induced resistance switching （EPIR） transparent resistance random access memory （TRRAM） 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]