Influence of Ga^+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves  

作　　者：祁先进 王寅岗 缪雪飞 李子全 黄一中 

机构地区：[1]College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics [2]Department of Materials,Oxford University,Oxford OX1 3PH,UK [3]School of Materials Science and Engineering,Nanyang Technological University,Singapore

出　　处：《Chinese Physics B》2010年第3期533-538,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 50671048)

摘　　要：Ga^＋ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance （MR） are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose. The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×10^13 ions/cm^2 and the step disappears afterwards. Two oeaks in the R-H curve are found to be asymmetric.Ga^＋ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance （MR） are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose. The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×10^13 ions/cm^2 and the step disappears afterwards. Two oeaks in the R-H curve are found to be asymmetric.

关 键 词：ion irradiation magnetisation reversal MAGNETORESISTANCE exchange bias 

分 类 号：O482.5[理学—固体物理]