多量子垒结构的有效势垒分析  

Analysis on effective barrier height of MQB structures

作　　者：张哲民[1] 黄德修[1] 李同宁[1] 

机构地区：[1]华中理工大学

出　　处：《半导体光电》1998年第6期373-375,共3页Semiconductor Optoelectronics

基　　金：863-307主题资助

摘　　要：对多量子垒（ＭＱＢ）的有效垒高与结构上的关系进行了理论研究。讨论了ＭＱＢ有效垒高与阱宽及垒宽的关系，发现随阱宽的增加，ＭＱＢ有效垒高表现出振荡特性；而随垒宽的增加，ＭＱＢ有效垒高趋于Ｕ０，并不具有振荡特性。单ＭＱＢ结构的有效垒高对阱宽较敏感，混合ＭＱＢ更有利于工艺的实现。The effective barrier height of multi-quantum-barrier(MQB) structures is analyzed theoretically in this paper followed by a discussion on the relationship between effective barrier height and layer width (both well and barrier).It is found that effective barrier height decreases with the increasing of barrier width while it appears to change periodically when the well width increases. The single MQB structure is sensitive to the layer width, so it is more convenient to use multi-MQB structure.

关 键 词：多量子垒结构 传输矩阵方法 有效垒高 激光器 

分 类 号：TN243[电子电信—物理电子学] TN303