S波段盒型输出窗击穿原因的电磁分析  

Electromagnetic Simulation of Breakdown Mechanisms of S-band Pillbox Output Windows

作　　者：朱方[1,2] 张兆传[1] 罗积润[1] 

机构地区：[1]中国科学院电子学研究所高功率微波源与技术重点实验室,北京100190 [2]中国科学院研究生院北京,100049

出　　处：《真空科学与技术学报》2010年第2期101-105,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：通过对实验过程中炸裂的S波段盒型输出窗观察和X射线光电子能谱检测,结合软件对窗内电磁场分布模拟以及电磁机理的理论分析,探讨高平均功率输出窗电击穿的物理原因,研究窗中高次模式电场对微波功率损耗、功率流方向以及输出窗电击穿的影响。结果表明,存在于窗片表面的TM11模可能降低输出窗的电压和平均功率承受能力。We addressed the possible mechanisms responsible for the break down of the S-band pillbox output window. The microstructures of the crack, and the composition and distribution of the deposited materials were characterized with X-ray photoelectron spectroscopy and conventional optical probes. The electromagnetic field distributions near the output window were simulated with CTS Microwave Studio software package. The influence of the high order cylindrical waveguide modes on the microwave power loss, on the direction of Poynting-vector and on the electric breakdown of the window was also simulated. The results show that the TMn mode on the window surface may possibly decrease the voltage breakdown threshold and the power capacity of the output window.

关 键 词：速调管 输出窗失效 电磁模拟 表面污染 

分 类 号：TM154.3[电气工程—电工理论与新技术]