荫罩式等离子体显示板寻址放电延迟时间的研究  

Study of Address Discharge Delay Time in Shadow Mask Plasma Display Panel

作　　者：杨兰兰[1] 屠彦[1] 李青[1] 朱振华[1] 王保平[1] 

机构地区：[1]东南大学电子科学与工程学院显示中心,南京210096

出　　处：《真空科学与技术学报》2010年第2期122-127,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(No.60871015;No.60571033);高等学校创新引智计划(111)资助

摘　　要：高氙浓度是提高等离体显示器亮度和发光效率的有效手段,但必须关注高氙比例对寻址放电延迟的影响。本文采用7英寸小屏实验平台研究氙比例增加对寻址放电延迟的影响,分析了氙比例增加,寻址电压和维持电压变化条件下,寻址放电的形成性延迟和统计性延迟的变化规律。研究结果表明寻址形成性延迟随寻址电压和维持电压的增加而减小,随氙比例的增加而增加,寻址形成性延迟时间与电子在一个平均自由程内获得的电场能量成反比。而寻址统计性延迟随寻址电压、维持电压的变化基本保持不变,随氙比例的变化规律性不明显,说明氙比例不是寻址统计性延迟的主要影响因素。研究表明荫罩式等离子体显示屏即使在50%氙比例时,仍可实现1.6μs的寻址。High xenon content was used in the gas mixtures to improve the luminous efficiency and luminance of the plasma display panel（PDP）. The impacts of the address voltage and sustain voltage on the formative delay and the statistical delay time in the address period were studied with a 7-inch experimental panel. The results show that the formative delay decreases with the increase of the address and sustain voltages, but increases with an increase of xenon concentration. And the formative delay is inversely proportional to the energy, which is the electron acquired from the electric filed in a mean free path. The statistical-delay varies little with the variations of the address and sustain voltages, and has no regular rule with the increase of the xenon content. The 7-inch panel can realize 1.6μs address even in 50% xenon content.

关 键 词：荫罩式等离子体显示板 高氙浓度 寻址形成性延迟 寻址统计性延迟 

分 类 号：TN136[电子电信—物理电子学]