电子束辐射对LED发光性能的影响  

The Influence of Electron-beam Irradiation on Light Characters of Light Emitting Diodes

作　　者：于莉媛[1] 王凡[1] 牛萍娟[1] 许文翠[1] 李晓云[1] 唐卫东[2] 杨斌[2] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160 [2]天津市技术物理研究所,天津300192

出　　处：《固体电子学研究与进展》2010年第1期47-50,共4页Research & Progress of SSE

基　　金：国家自然科学基金项目(6070615);天津市教委发展基金重点项目(ZD200721)

摘　　要：研究了低能电子束辐照对发光二极管(Light emitting diode,LED)发光性能的影响。利用实验室加速器提供的电子束模拟空间电子辐射,分别对发不同颜色的光的LED进行不同剂量的辐照,并对比辐照前后的LED的电学性质及光学性质的变化。在电子束辐照下,LED的发光强度提高,同时在统计了大量LED后,发现这些LED的发光强度的离散性变好。对经电子束辐照后的LED进行电流加速老化实验,发现电子束辐照后的LED的发光强度下降趋势相比未经辐照的LED更为明显。同时利用电子束辐照机理对实验结果进行分析和讨论。The influence of low-energy low-dose electron-beam irradiation on the light emitting diode （LED） has been studied in this paper. Using the space electron-beam irradiation simulated by ion-beam emitted from experimental accelerator, the LED emitting different color light were irradiated under the different electron irradiation dose. We compare the optical and electronical character results of the intial and irradiated LED. The results demonstrate that the light intensity of irradiated LED increases, and the disctrete property of the statistical light intensity of plenty of LED is better. During the current accelerated aging experiment, the light intensity of the irradiated LED trends to significant decreasing compared with the intial LEDs. Using the electron beam irradiation mechanism the experiment results are discussed and analysed.

关 键 词：电子束辐射 发光二极管 发光强度 

分 类 号：TN312.8[电子电信—物理电子学]