低功耗宽带CMOS LC-VCO设计  

Design of Low Power Wide Band CMOS LC-VCO

作　　者：肖时茂[1] 马成炎[2] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]杭州中科微电子有限公司,杭州310053

出　　处：《固体电子学研究与进展》2010年第1期85-89,共5页Research & Progress of SSE

基　　金：国家高新技术研究与发展项目(863)(2007AA12Z344)

摘　　要：基于电容调谐无尾电流源互补-Gm VCO，提出了一种新的宽带VCO功耗优化的方法。通过改变四个累积型可变电容（AMOS）的偏置电压实现对电容调谐曲线补偿，使频率调谐曲线在整个控制电压范围内接近线性化，从而实现宽的频率调谐范围。采用标准0．18／μm 1P6MRFCMOS工艺设计了一款3～3．6GHz频率范围LC-VCO。测试结果表明，整个VCO包含输出缓冲在内，面积为0．45mm^2，工作在1．5V电源下，电流为1．8mA，输出相位噪声在200kHz偏移处为-93dBc／Hz。A novel power optimization method for complementary -Gm VCO without tail current source is proposed. Wide-band tuning range was achieved by tuning curve compensation with four Accumulation-Mode MOS （AMOS） varactors. A LC-VCO was fabricated in standard 0. 18 μm 1P6M RFCMOS process. The circuit including output buffers consumes 1.8 mA from 1.5 V power supply and its area is 0.45 mm^2. The phase noise measured is lower than -93 dBc/Hz at 200 kHz offset from a 3 GHz carrier while measured tuning range is from 3 GHz to 3.6 GHz as control voltage varies from 0 to 1.5 V.

关 键 词：电感电容压控振荡器 功耗优化 调谐曲线补偿 

分 类 号：TN752[电子电信—电路与系统]