光助MOCVD生长p-ZnSe及ZnSe p-n结室温蓝色电致发光  

Photo assisted Growth of p ZnSe and Room Temperature EL of ZnSe Diodes

作　　者：张吉英[1] 申德振[1] 范希武[1] 吕有明 杨宝均[1] 

机构地区：[1]中国科学院长春物理研究所

出　　处：《光电子．激光》1998年第6期443-445,共3页Journal of Optoelectronics·Laser

基　　金：国家"八六三"高技术光电子主题;国家自然科学基金;中国科学院长春物理研究所激发态物理开放实验室资助

摘　　要：用光助低压ＭＯＣＶＤ进行ＺｎＳｅ及ＺｎＳｅＮ外延层生长，由发光光谱表明，在光助下生长的本征ＺｎＳｅ外延膜具有高质量；ＺｎＳｅＮ外延层中与Ｎ有关的深中心发射得到有效抑止。其ｐ－ＺｎＳｅ受主载流子浓度达３×１０１７ｃｍ－３。在制备的ｎ－ＺｎＳｅ／ＺｎＣｄＳｅ－ＺｎＳｅＱＷ／ｐ－ＺｎＳｅ结构中，在室温下观测到该二极管电脉冲下的蓝色电致发光（ＥＬ）p type ZnSe epilayers were grown using t Butylamine (TBA) as a nitrogen dopant source by photo assisted low pressure metal organic chemical vapour deposition (LP MOCVD).Growth pressure was 10108Pa (76 torr) and growth temperature was 380℃.The deep centra emission could be suppressed in p ZnSe epilayers grown with the irradiation.The acceptor concentration in p ZnSe was obtained about 3×10 17 cm -3 .ZnSe PIN (n ZnSe/ZnCdSe ZnSe QW/p ZnSe structure) diodes were prepared.The blue electroluminescence (EL) was observed at a wavelength of 479nm under forward pulse excitation at room temperature (RT).

关 键 词：光助MOCVD 室温 蓝色EL 外延生长 硒化锌 

分 类 号：TN304.054[电子电信—物理电子学] TN304.25