金属离子在多孔硅表面的吸附与电镀过程中金属在多孔硅表面的淀积  

Adsorption and Electrodeposition of Metal Ions on the Surface of Porous Silicon

作　　者：王冠中[1] 李鹏[1] 马玉蓉[1] 方容川[1] 李凡庆[2] 

机构地区：[1]中国科学技术大学物理系,合肥230026 [2]中国科学技术大学结构与成分分析中心,合肥230026

出　　处：《化学学报》1998年第2期171-177,共7页Acta Chimica Sinica

摘　　要：刚制备的多孔硅与金属盐溶液接触会产生金属离子在多孔硅表面的吸附现象.实验显示这一现象只发生在新鲜的多孔硅表面,而存放一月以后的样品不具备此性质.文中把这一现象归因于新鲜的多孔硅表面电子的富集,溶液中金属离子从多孔硅表面获得电子而附着.多孔硅表面电镀金属过程中,一定电压下电镀电流密度在起始阶段逐渐下降,可以用一个指数关系式较好地描述,在本文中用一个唯象模型予以解释.The effect of metal ions adsorption process on the native surface of porous silicon as-anodized is reported in this paper. The adsorption effect is discussed in term of the negative potential of native surface of porous silicon due to the hole depletion during anodization, and the negative potential vanishes as the sample is stored above one month. In the beginning of the electrodeposition process, the current density decreases with time under a certain voltage and the exponential relationship is explained in term of a simple model.

关 键 词：多孔硅 吸附 电镀 离子 金属 沉积 

分 类 号：O613.72[理学—无机化学] TQ153[理学—化学]