InGaAs/GaAs应变量子阱激光器MOCVD生长研究  

Study of strained InGaAs/GaAs quantum-well laser by MOCVD

作　　者：刘安平[1] 段利华 周勇 

机构地区：[1]重庆大学应用物理系,重庆400030 [2]重庆光电研究所,重庆400060

出　　处：《光电子．激光》2010年第2期163-165,共3页Journal of Optoelectronics·Laser

基　　金：重庆市科委自然科学基金资助项目(2007BB2120)

摘　　要：采用金属有机物化学气相淀积(MOCVD)方法生长了InGaAs/GaAs应变量子阱(QW),通过降低生长温度、提高生长速度以及采用应变缓冲层(SBL)结构,改善了应变QW生长表面质量和器件荧光(PL)谱特性,实验表明,通过优化工艺条件和采用SBL等手段提高了应变QW质量。生长的QW结构用于1054 nm激光器的制作,经测试,器件具有较低的阈值电流和较高的单面斜率效率,性能较好。An InGaAs/GaAs strained quantum-well（QW） is prepared by metal-organic chemical-vapor deposition（MOCVD）.During the growth,the surface growth quality and PL spectra of this strained QW are improved obviously by reducing temperature,increasing speed and using strained buffer layer（SBL）.The experimental results indicate that the optimized condition and SBL are used to significantly improve the QW performance.A 1 054 nm laser is fabricated with this strained QW,which exhibits good threshold current and slope efficiency.The spectral width of the strain QW laser is 1.6 nm at an injection current of 50 mA.

关 键 词：金属有机物化学气相淀积(MOCVD) InGaAs/GaAs量子阱(QW) 应变缓冲层(SBL) 

分 类 号：TN248.4[电子电信—物理电子学]