V2O5/V/V2O5薄膜退火条件对其的制备及特性的影响  

Preparation of V_2O_5/V/V_2O_5 thin film and the impact of annealing conditions on the characteristics

作　　者：罗振飞[1] 吴志明[1] 祝婕[1] 王涛[1] 蒋亚东[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《光电子．激光》2010年第3期392-395,共4页Journal of Optoelectronics·Laser

基　　金：教育部新世纪优秀人才支持计划资助项目(NCET-04-0896)

摘　　要：利用间歇通O2的方式,采用射频磁控溅射法在Si3N4衬底上制备V2O5/V/V2O5复合薄膜,研究了不同原位退火条件对薄膜阻值及电阻温度系数(TCR)的影响。结果表明,经过退火处理后的V2O5/V/V2O5复合薄膜方阻值大大降低,电阻-温度曲线呈现良好的线性特性,并具有高TCR值及优良的电学稳定性。利用X射线光电子能谱(XPS)对退火后的V2O5/V/V2O5复合薄膜表面进行V、O元素分析,结果表明,V2O5/V/V2O5复合薄膜各层间的扩散效果显著影响薄膜表面不同价态V离子的含量,低价V离子会随着退火温度的升高及退火时间的延长而增多,薄膜表面对水分子的吸附也随之变强。在实验结果的基础上,利用扩散理论阐述了退火条件对V2O5/V/V2O5复合薄膜电学性能影响的机理。V2O5/V/V2O5 multi-layer films have been fabricated on Si3N4 substrate via intermittent-oxygen-supply method by radio frequency magnetron sputtering.The impact of annealing condition on the square resistance and temperature coefficient of resistance（TCR） have been studied.The results indicate that after annealing process the square resistance of V2O5/V/V2O5 multi-layer films decreases largely,and the relation between resistance and temperature shows a good linear property,and these films fulfill high TCR and excellent stability.XPS is employed to reveal the details of V and O elements on the surface of V2O5/V/V2O5 multi-layer films.The results indicate that the amount of vanadium ions of different valence states is deeply influenced by the diffusion effect between the layers,and the amount of lower valence states increases with the annealing temperature and annealing time increases,and the adsorption of H2O on the surface is enhanced at the same time.Based on the experimental results,the mechanism of the impact of annealing condition on the electrical property of V2O5/V/V2O5 multi-layer is interpreted according to the diffusion theory.

关 键 词：V2O5/V/V2O5复合薄膜 退火 扩散 

分 类 号：O484[理学—固体物理]