基于聚合物电介质的并五苯场效应晶体管  

Pentacene field-effect transistors based on polymer dielectric

作　　者：周建林[1] 黄智勇[1] 甘平[1] 王靖[1] 郭瑜[1] 

机构地区：[1]重庆大学通信工程学院电子工程系,重庆400044

出　　处：《光电子．激光》2010年第4期516-519,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60676033)

摘　　要：采用顶接触结构分别在SiO2、聚甲基丙烯酸甲酯(PMMA)绝缘层上制备了以并五苯为有源层的两种有机场效应晶体管(OFET),其中SiO2绝缘层采用热生长法制备,PMMA绝缘层采用溶液旋涂法制备。与常规基于无机绝缘层的器件相比,采用聚合物为绝缘层后,不但器件的制作工艺简化和成本降低,而且器件性能大幅提高,经测试,器件的迁移率提到0.153cm2/Vs,而阈值电压降低6V。采用原子力显微镜(AFM)、X射线衍射(XRD)等对器件性能提高的原因进行了详细分析。Pentacene field-effect transistor（OFET） was fabricated with silicon oxide（SiOe ） or poly-meth- ylmethacrylate（PMMA） as the gate insulator. The SlOe insulator was fabricated with thermally grown method, and the PMMA was fabricated by solution-casting method. Comparing with traditional OFETs which have inorganic insulator, the transistor with PMMA dielectric can have advantage in easily making films by solution-processing with low cost, and it can improve the performance of transistors obviously. Then,OFET can be operated with mobility of 0. 153 cmz/Vs and threshold voltage decreases 6 V. Xray diffraction（XRD） measurements and atomic force microscope（AFM） images are also used as the tools for investigation.

关 键 词：有机晶体管 并五苯 绝缘层 聚合物 

分 类 号：TN386[电子电信—物理电子学]