溶液连续过滤快速生长KDP晶体及其品质分析  

Continuous Filtration System for Rapid Growth and Quality Analysis of KDP Crystals

作　　者：汪剑成[1,2] 苏根博[1] 郑国宗[1] 李国辉[1] 邹宇琦[1] 赵元安[3] 胡国行[3] 黄万霞[4] 庄欣欣[1] 

机构地区：[1]中国科学院福建物质结构研究所,福州350002 [2]中国科学院研究生院,北京100039 [3]中国科学院上海光学精密机械研究所,上海201800 [4]中国科学院高能物理研究所北京同步辐射实验室,北京100039

出　　处：《人工晶体学报》2010年第1期1-4,共4页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863)专项子课题

摘　　要：设计溶液实时连续过滤装置用于降温法快速生长KDP晶体。采用高亮度激光照射分析对比晶体内部的散射点密度,以同步辐射为光源的X射线形貌成像技术探测晶体内部的生长缺陷,并测定晶体三倍频激光(355nm)的损伤阈值。实验结果显示,溶液连续过滤法生长的KDP晶体中包裹体和位错的密度明显降低,晶体的激光损伤阈值提高了30%。An effective continuous filtration crystallizer was developed to grow KDP crystal by temperature reduction method.Ultra-microscopy,X-ray photography and laser damage threshold were adopted in characterizing the quality of crystal.The results show that under the condition of continuous filtration,the formation of inclusions and dislocations in crystal is significantly reduced,and the laser damage threshold of crystal under radiation at wavelength 355 nm is improved by about 30%.

关 键 词：KDP晶体 连续过滤 包裹 位错 激光损伤阈值 

分 类 号：O782[理学—晶体学]